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STGP20V60DF

Name: STMicroelectronics STGP20V60DF
Brand: STMicroelectronics
SKU: 511-STGP20V60DF
Price: 153.7 PHP
Availability: InStock

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Mouser #:

511-STGP20V60DF

Mfr. #:

STGP20V60DF

Mfr.:

STMicroelectronics

Paglalarawan:

IGBTs 600V 20A High Speed Trench Gate IGBT

Kumpletuhin ang Iyong Disenyo

Datasheet:

STGP20V60DF Datasheet (PDF)

ECAD Model:

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May Stock: 976

Stock:: 976 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 15 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱153.70	₱153.70
	₱74.24	₱742.40
	₱66.70	₱6,670.00
	₱54.40	₱27,200.00
	₱52.32	₱52,320.00
	₱51.16	₱102,320.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	STMicroelectronics
Kategorya ng Produkto:	Mga IGBT
RoHS:
Teknolohiya:	Si
Package / Case:	TO-220-3
Isitilo ng Mounting:	Through Hole
Kumpigurasyon:	Single
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	2.3 V
Maximum na Gate Emitter Voltage:	- 20 V, 20 V
Tuloy-tuloy na Collector Current sa 25 C:	40 A
Pd - Power Dissipation:	167 W
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Series:	STGP20V60DF
Packaging:	Tube
Brand:	STMicroelectronics
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	CN
Gate-Emitter Leakage Current:	250 nA
Uri ng Produkto:	IGBT Transistors
Dami ng Pack ng Pabrika:	1000
Subcategory:	IGBTs
Timbang ng Unit:	2.300 g

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Mga Piniling Attribute: 0

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Datasheet

STGP20V60DF Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

IGBT V Series

STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.