Mga SiC MOSFET

 Mga SiC MOSFET
SiC MOSFETs are available at Mouser Electronics from industry leading manufacturers. Mouser is an authorized distributor for many SiC MOSFET manufacturers including Infineon, Microchip, Navitas Semiconductor, onsemi, ROHM Semiconductor, STMicroelectronics, Wolfspeed & more. Please view our large selection of SiC MOSFETs below.
Mga Resulta: 1,322
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode Kuwalipikasyon Pangalang pangkalakal
IXYS SiC MOSFETs SiC MOSFET in TO247-4L HV 550May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 60 A 53 mOhms - 5 V, 20 V 4.5 V 94.7 nC - 55 C + 175 C 249 W Enhancement
IXYS SiC MOSFETs 1200V 62mohm (25A a. 25C) SiC MOSFET in isolated TO247-3L 388May Stock
400Inoorder
Min.: 1
Mult.: 1

Through Hole TO-247-3L N-Channel 1 Channel 1.2 kV 28 A 81 mOhms - 4 V, + 21 V 4.8 V 52 nC - 40 C + 150 C 75.3 W Enhancement
IXYS SiC MOSFETs 1200V 36mohm (43A a. 25C) SiC MOSFET in isolated TO247-3L 478May Stock
400Inoorder
Min.: 1
Mult.: 1

Through Hole TO-247-3L N-Channel 1 Channel 1.2 kV 45 A 47 mOhms - 4 V, + 21 V 4.8 V 79 nC - 40 C + 150 C 142 W Enhancement
IXYS SiC MOSFETs 1200V 18mOhm (30A at 25C) SiC MOSFET in isolated TO247-4L 286May Stock
Min.: 1
Mult.: 1

Through Hole ISO247-4 N-Channel 1 Channel 1.2 kV 46 A 47 mOhms 21 V 4.8 V 79 nC - 40 C + 150 C 143.7 W Enhancement
IXYS SiC MOSFETs 1200V 18mohm (30A a. 25C) SiC MOSFET in isolated TO247-3L 472May Stock
400Inoorder
Min.: 1
Mult.: 1

Through Hole TO-247-3L N-Channel 1 Channel 1.2 kV 85 A 22.5 mOhms - 4 V, + 21 V 4.8 V 154 nC - 40 C + 150 C 266 W Enhancement
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 105A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 450May Stock
Min.: 1
Mult.: 1
Through Hole TO-247N-3 N-Channel 1 Channel 750 V 105 A 16.9 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 312 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs Transistor SiC MOSFET 750V 13m 4th Gen TO-247-4L 397May Stock
Min.: 1
Mult.: 1
Through Hole TO-247-4L N-Channel 1 Channel 750 V 105 A 16.9 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs TOLL 750V 80A SIC 392May Stock
Min.: 1
Mult.: 1
: 2,000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 80 A 4.8 V 123 nC + 175 V 277 W Enhancement
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 42A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 439May Stock
Min.: 1
Mult.: 1
Through Hole TO-247N-3 N-Channel 1 Channel 750 V 42 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 136 W Enhancement
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 42A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 450May Stock
Min.: 1
Mult.: 1
Through Hole TO-247N-3 N-Channel 1 Channel 750 V 42 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC - 40 C + 175 C 136 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 42A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 430May Stock
Min.: 1
Mult.: 1
Through Hole TO-247-4L N-Channel 1 Channel 750 V 42 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 136 W Enhancement
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 42A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 450May Stock
Min.: 1
Mult.: 1
Through Hole TO-247-4L N-Channel 1 Channel 750 V 42 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 136 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs 750V, 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 800May Stock
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7LA N-Channel 1 Channel 750 V 38 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 115 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs 750V, 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET 700May Stock
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7LA N-Channel 1 Channel 750 V 38 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC MOSFETs TOLL 750V 37A SIC 1,600May Stock
Min.: 1
Mult.: 1
: 2,000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 37 A 4.8 V 63 nC + 175 V 133 W Enhancement
ROHM Semiconductor SiC MOSFETs 1200V, 32A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 450May Stock
Min.: 1
Mult.: 1
Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 32 A 65 mOhms - 4 V, + 21 V 4.8 V 71 nC + 175 C 136 W Enhancement
ROHM Semiconductor SiC MOSFETs 1200V, 32A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 442May Stock
Min.: 1
Mult.: 1
Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 32 A 65 mOhms - 4 V, + 21 V 4.8 V 71 nC + 175 C 136 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs 1200V, 32A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 427May Stock
Min.: 1
Mult.: 1
Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 32 A 65 mOhms - 4 V, + 21 V 4.8 V 71 nC + 175 C 136 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs TOLL 750V 26A SIC 784May Stock
Min.: 1
Mult.: 1
: 2,000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 26 A 4.8 V 48 nC + 175 V 100 W Enhancement
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 25A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 447May Stock
Min.: 1
Mult.: 1
Through Hole TO-247-4L N-Channel 1 Channel 750 V 25 A 85 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 88 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs 750V, 45m, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET 700May Stock
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7LA N-Channel 1 Channel 750 V 22 A 85 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 71 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 1200V, 19A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 440May Stock
Min.: 1
Mult.: 1
Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 19 A 117 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 88 W Enhancement
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 1200V, 19A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 443May Stock
Min.: 1
Mult.: 1
Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 19 A 117 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 88 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 1200V, 19A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 450May Stock
Min.: 1
Mult.: 1
Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 19 A 117 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 88 W Enhancement
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 1200V, 19A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 400May Stock
Min.: 1
Mult.: 1
Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 19 A 117 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 88 W Enhancement AEC-Q101